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  ? semiconductor components industries, llc, 2005 july, 2005 ? rev. 9 1 publication order number: 1pmt5.0at3/d 1pmt5.0at1/t3 series zener transient voltage suppressor powermite ? package the 1pmt5.0at1/t3 series is designed to protect voltage sensitive components from high vo ltage, high energy transients. excellent clamping capability, high surge capability, low zener impedance and fast response time. the advanced packaging technique provides for a highly ef ficient micro miniature, space saving surface mount with it s unique heatsink design. the powermite has the same thermal performance as the sma while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the indus try. because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. specification features: ? stand?off voltage: 5.0 v ? 58 v ? peak power ? 200 w @ 1 ms (1pmt5.0a ? 1pmt36a) ? 175 w @ 1 ms (1pmt40a ? 1pmt58a) ? maximum clamp voltage @ peak pulse current ? low leakage ? response time is typically < 1 ns ? esd rating of class 3 (> 16 kv) per human body model ? low profile ? maximum height of 1.1 mm ? integral heatsink/locking tabs ? full metallic bottom eliminates flux entrapment ? small footprint ? footprint area of 8.45 mm 2 ? powermite is jedec registered as do?216aa ? lead orientation in tape: cathode (short) lead to sprocket holes ? cathode indicated by polarity band ? pb?free packages are available mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable mounting position: any maximum case temperature for soldering purposes: 260 c for 10 seconds plastic surface mount zener overvoltage transient suppressor 5 ? 58 v 200 w peak power device package shipping ? ordering information 1pmtxxat1 powermite 3,000/tape & reel powermite case 457 plastic 12 1: cathode 2: anode 1 2 1pmtxxat3 powermite 12,000/tape & ree l 1pmtxxat3g powermite (pb?free) 12,000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. http://onsemi.com 1pmtxxat1g powermite (pb?free) 3,000/tape & reel marking diagram 1 cathode 2 anode m = date code mxx = specific device code (see table on page 3)  = pb?free package mxx  m
1pmt5.0at1/t3 series http://onsemi.com 2 maximum ratings rating symbol value unit maximum p pk dissipation, (pw?10/1000  s) (note 1) (1pmt5.0a ? 1pmt36a) p pk 200 w maximum p pk dissipation, (pw?10/1000  s) (note 1) (1pmt40a ? 1pmt58a) p pk 175 w maximum p pk dissipation, (pw?8/20  s) (note 1) p pk 1000 w dc power dissipation @ t a = 25 c (note 2) derate above 25 c thermal resistance, junction?to?ambient p d r  ja 500 4.0 248 mw mw/ c c/w thermal resistance, junction?to?lead (anode) r  janode 35 c/w maximum dc power dissipation (note 3) thermal resistance, junction?to?tab (cathode) p d r  jcathode 3.2 23 w c/w operating and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. nonrepetitive current pulse at t a = 25 c. 2. mounted with recommended minimum pad size, dc board fr?4. 3. at tab (cathode) temperature, t tab = 75 c electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 4) = 35 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f uni?directional tvs i pp i f v i i r i t v rwm v c v br v f
1pmt5.0at1/t3 series http://onsemi.com 3 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.25 volts @ 200 ma) device * marking v rwm v br @ i t (v) (note 6) i t i r @ v rwm v c @ i pp i pp (a) (note 5) min nom max (ma) (  a) (v) (note 7) 1pmt5.0at1, t3, g mke 5.0 6.4 6.7 7.0 10 50 9.2 21.7 1pmt7.0at1, t3, g mkm 7.0 7.78 8.2 8.6 10 30 12 16.7 1pmt12at1, t3, g mle 12 13.3 14.0 14.7 1.0 1.0 19.9 10.1 1pmt16at1, t3, g mlp 16 17.8 18.75 19.7 1.0 1.0 26 7.7 1pmt18at1, t3 mlt 18 20.0 21.0 22.1 1.0 1.0 29.2 6.8 1pmt22at1, t3 mlx 22 24.4 25.6 26.9 1.0 1.0 35.5 5.6 1pmt24at1, t3 mlz 24 26.7 28.1 29.5 1.0 1.0 38.9 5.1 1pmt26at1, t3 mme 26 28.9 30.4 31.9 1.0 1.0 42.1 4.8 1pmt28at1, t3, g mmg 28 31.1 32.8 34.4 1.0 1.0 45.4 4.4 1pmt30at1, t3, g mmk 30 33.3 35.1 36.8 1.0 1.0 48.4 4.1 1pmt33at1, t3, g mmm 33 36.7 38.7 40.6 1.0 1.0 53.3 3.8 1pmt36at1, t3 mmp 36 40.0 42.1 44.2 1.0 1.0 58.1 3.4 1pmt40at1, t3 mmr 40 44.4 46.8 49.1 1.0 1.0 64.5 2.7 1pmt48at1, t3 mmx 48 53.3 56.1 58.9 1.0 1.0 77.4 2.3 1pmt51at1, t3 mmz 51 56.7 59.7 62.7 1.0 1.0 82.4 2.1 1pmt58at1, t3 mng 58 64.4 67.8 71.2 1.0 1.0 93.6 1.9 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. 5. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level. 6. v br measured at pulse test current i t at ambient temperature of 25 c. 7. surge current waveform per figure 2 and derate per figure 4. *the ?g?? suffix indicates pb?free package available.
1pmt5.0at1/t3 series http://onsemi.com 4 p , peak power (watts) p t p , pulse width (  s) 100 1000 10,000 1.0 10 100 10 01234 0 50 100 t, time (ms) value (%) half value ? i rsm 2 peak value ? i rsm t r t r 10  s typical protection circuit v in v l z in load peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . figure 1. pulse rating curve figure 2. 10 x 1000  s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time (  s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8  s peak value i rsm @ 8  s half value i rsm /2 @ 20  s figure 3. 8 x 20  s pulse waveform 1000 10,000 figure 4. pulse derating curve
1pmt5.0at1/t3 series http://onsemi.com 5 figure 5. typical derating factor for duty cycle derating factor 1 ms 10  s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100  s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms figure 6. steady state power derating 1.2 1.0 0.8 0.6 0.4 0.2 0 ?55 25 85 150 t, temperature ( c) v , typical forward voltage (volts) f figure 7. forward voltage 25 50 75 100 125 17 5 3.5 2.5 2 1.5 1 0 t, temperature ( c) p , maximum power dissipation (w ) d 0.5 t l 150 3 10,000 1000 100 10 11010 0 working peak reverse voltage (volts) c, capacitance (pf) figure 8. capacitance versus working peak reverse voltage measured @ 50% v rwm measured @ zero bias
1pmt5.0at1/t3 series http://onsemi.com 6 outline dimensions dim min max min max inches millimeters a 1.75 2.05 0.069 0.081 b 1.75 2.18 0.069 0.086 c 0.85 1.15 0.033 0.045 d 0.40 0.69 0.016 0.027 f 0.70 1.00 0.028 0.039 h ?0.05 +0.10 ?0.002 +0.004 j 0.10 0.25 0.004 0.010 k 3.60 3.90 0.142 0.154 l 0.50 0.80 0.020 0.031 r 1.20 1.50 0.047 0.059 s notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. s b m 0.08 (0.003) c s t ?a? ?b? s j k ?t? h l j c d s b m 0.08 (0.003) c s t f term. 1 term. 2 r 0.50 ref 0.019 ref powermite case 457?04 issue d 2.54 0.100 0.635 0.025 1.27 0.050 2.67 0.105 0.762 0.030  mm inches  scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 1pmt5.0at3/d powermite is a registered trademark of and used under a license from microsemi corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.


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